Secondary magnetic phases in (Ga,Mn)As determined by x-ray magnetic circular dichroism

被引：8
|
作者：
Edmonds, K. W.
Freeman, A. A.
Farley, N. R. S.
Wang, K. Y.
Campion, R. P.
Gallagher, B. L.
Foxon, C. T.
van der Laan, G.
Arenholz, E.
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] STFC, Daresbury Lab, Warrington WA4 4AD, Cheshire, England
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2756046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the magnetic and electronic properties of (Ga,Mn)As ferromagnetic semiconductor layers containing low concentrations of room temperature magnetic MnAs precipitates, using x-ray magnetic circular dichroism in x-ray absorption spectroscopy. Measurements below and above the Curie temperature of the (Ga,Mn)As show localized multiplet structures and broad metallic-like line shapes, respectively. By applying magnetic fields below the coercivity of the (Ga,Mn)As layer, the magnetization reversal behavior of the ferromagnetic semiconductor and the MnAs precipitates can be resolved and are found to be independent of each other.
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页数：4
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