Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

被引：7

作者：

Ruggles, Timothy J. ^{[1
]}

Deitz, Julia, I ^{[1
]}

Allerman, Andrew A. ^{[1
]}

Carter, C. Barry ^{[1
]}

Michael, Joseph R. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

MICROSCOPY AND MICROANALYSIS | 2021年 / 27卷 / 02期

关键词：

dislocation microscopy; ECCI; gallium nitride; HREBSD; MOVPE; ELECTRON BACKSCATTER DIFFRACTION; DISLOCATION DENSITY; ELASTIC STRAIN; EBSD;

D O I：

10.1017/S143192762100009X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper characterizes novel "star" defects in GaN films grown with metal-organic vapor phase deposition (MOVPE) on GaN substrates with electron channeling contrast imaging (ECCI) and high-resolution electron backscatter diffraction (HREBSD). These defects are hundreds of microns in size and tend to aggregate threading dislocations at their centers. They are the intersection of six nearly ideal low-angle tilt boundaries composed of -type pyramidal edge dislocations, each on a unique slip system.

引用

页码：257 / 265

页数：9

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