In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy

被引：0

作者：

Nishide, Masamichi ^{[1
]}

Kuzuhara, Maresuke ^{[2
]}

Tai, Takeshi ^{[2
]}

Katoda, Takashi ^{[2
]}

Morioka, Hitoshi ^{[3
]}

Funakubo, Hiroshi ^{[4
]}

Nishida, Ken ^{[1
]}

Yamamoto, Takashi ^{[1
]}

机构：

[1] Natl Def Acad, Dept Commun Engn, Kanagawa 2398686, Japan

[2] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Tosayamada, Kochi 7828502, Japan

[3] Bruker AXS KK, Applicat Scientist XRD Thin Film, Kanagawa Ku, Yokohama, Kanagawa 2210022, Japan

[4] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2010年 / 118卷 / 1380期

关键词：

Pb(Zr; Ti)O-3; Piezoelectric micro cantilever; MEMS; Micro-Raman spectroscopy; Domain switching; THIN-FILM; PIEZOELECTRIC MICROCANTILEVER; STRESS;

D O I：

10.2109/jcersj2.118.644

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The crystal structure and strain in a (100)/(001)-oriented PZT micro cantilever under applied voltage were characterized by in-situ Raman spectroscopy. A Pt/LaNiO3/(100)/(001)PZT/LaNiO3/Pt/Ti/SiO2/silicon-on-insulator (SOI) multilayer structure was fabricated in a process based on a microelectromechanical system (MEMS). The volume fraction of the domain switching from a-domains to c-domains was monotonously increased with increases in the applied voltage. No compressive in-plane lattice strain was induced in the PZT film with the increases in the applied voltage. These results show that Raman spectroscopy is a useful method for in-situ observation of PZT micro cantilevers. (C) 2010 The Ceramic Society of Japan. All rights reserved.

引用

页码：644 / 647

页数：4

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