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Ga2O3(Gd2O3)/GaAs power MOSFETs

被引：16
|
作者：
Wang, YC [1 ]
Hong, M [1 ]
Kuo, JM [1 ]
Mannaerts, JP [1 ]
Tsai, HS [1 ]
Kwo, J [1 ]
Krajewski, JJ [1 ]
Chen, YK [1 ]
Cho, AY [1 ]
机构：
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 08期
关键词：
D O I：
10.1049/el:19990456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The power performance of GaAs MOSFETs using Ga2O3(Gd2O3) as the gale dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at 850MHz cellular frequency and tuned for maximum output power, maximum power-added efficiencies of 45 and 56% were obtained under 3 and 5V operation, respectively. An output power of 26.5dBm was measured from a 1 mu m x 2.4mm device under 5V operation. These results show that the developed GaAs MOSFETs are promising candidates for microwave power amplifiers.
引用
收藏
页码：667 / 669
页数：3
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