1.55-μm buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs substrate

被引：13
|
作者：
Ohiso, Y [1 ]
Okamoto, H [1 ]
Iga, R [1 ]
Kishi, K [1 ]
Tateno, K [1 ]
Amano, C [1 ]
机构：
[1] Nippon Telegraph & Tel Corp, Photon Labs, Kanagawa 2430198, Japan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 09期
关键词：
buried heterostructure; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs); wafer bonding;
D O I：
10.1109/3.945325
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate 1.55-mum buried-heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate. Thin-film wafer-fusion technology enables InP-based BH VCSELs to be fabricated on GaAs/AlAs distributed Bragg reflectors. Detailed investigations of the device resistance are also described. As a result of introducing BH and obtaining low device resistance, the threshold current density under CW operation shows the independence of mesa size due to a strong index guide and small noneffective current. A 5-/mum VCSEL exhibits a record threshold current of 380 muA at 20 degreesC. This VCSEL also operates with single transverse mode up to the maximum optical output power.
引用
收藏
页码：1194 / 1202
页数：9
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