Inductively coupled plasma etching of InP using N2/H2

被引：6
|
作者：
Chen, HY
Ruda, HE
Navarro, AZ
机构：
[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada
[2] Tampico Puerto Ind Altamira, Cicata Unidad Altamira, Altamira, Tamaulipas, Mexico
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 10期
关键词：
D O I：
10.1063/1.1365942
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Inductively coupled plasma etching of InP in N-2/H-2 is demonstrated. The dependence of etch rates on N-2/H-2 composition, radio frequency power and etching pressure is presented. An optimized process is developed and shown to be suitable for the slow, well-controlled, etching of InP-based nanostructures, while yielding excellent surface morphology. (C) 2001 American Institute of Physics.
引用
收藏
页码：5322 / 5325
页数：4
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