Resonant Raman scattering of Hg1-xCdxTe

被引:2
|
作者
Huang, SH [1 ]
Mo, YD
机构
[1] Kunming Univ Sci & Technol, Kunming 650051, Peoples R China
[2] Kunming Inst Phys, Kunming 650223, Peoples R China
关键词
Hg1-xCdxTe; resonant Raman scattering; forbidden" resonant enhancement;
D O I
10.7498/aps.50.964
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
When the photon energy of an incident light is close to E-0 + Delta (0) of Hg1-xCdxTe, we observe the resonant Raman scattering, "forbidden" resonant enhancement Raman scattering and the second-order resonant Raman scattering. We have analyzed the reason why we can observe the weak "forbidden" TO2 mode from the principal (100) face of Hg1-xCdxTe in the case of no resonant scattering; and also analyzed the reason why the "forbidden" TO2 mode from the principal (100) face of Hg1-xCdxTe increases significantly in the case of no resonant scattering. According to our analysis, we find that the second-order resonant Raman scattering by two LO phonons is caused largely by the interband Frohlich interaction.
引用
收藏
页码:964 / 967
页数:4
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