Resonant tunnelling and intersubband absorption in AIN - GaN superlattices

被引：1

作者：

Baumann, E ^{[1
]}

Giorgetta, FR ^{[1
]}

Hofstetter, D ^{[1
]}

Wu, H ^{[1
]}

Schaff, WJ ^{[1
]}

Eastman, LF ^{[1
]}

Kirste, L ^{[1
]}

机构：

[1] Univ Neuchatel, CH-2000 Neuchatel, Switzerland

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460611

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 mu m. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.

引用

页码：1014 / 1018

页数：5

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