A Packaged Noise-Canceling High-Gain Wideband Low Noise Amplifier

被引：20

作者：

Regulagadda, Sesha Sairam ^{[1
]}

Sahoo, Bibhu Datta ^{[2
,3
]}

Dutta, Ashudeb ^{[1
]}

Varma, K. Y. ^{[4
]}

Rao, V. S. ^{[4
]}

机构：

[1] Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad 502205, Telangana, India

[2] Univ Illinois, Dept Elect & Comp Engn, Champaign, IL 61801 USA

[3] Indian Inst Technol Kharagpur, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[4] Astra Microwave Prod Ltd, MMIC Dept, Hyderabad 502285, Telangana, India

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2019年 / 66卷 / 01期

关键词：

Noise canceling; wide band low noise amplifier (LNA); current re-use; shunt peaking buffer; high power gain; NM CMOS; DESIGN; LNAS;

D O I：

10.1109/TCSII.2018.2828781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a bandwidth and gain enhancement technique for packaged single-ended wideband low noise amplifier (LNA) module for high-sensitivity receivers. Wide bandwidth, low noise figure (NF), and high power gain are achieved by using gate-source inductors assisted impedance matching, current reuse feed-forward noise cancellation technique, and integrated shunt peaking output buffer. Fabricated in UMC 65-nm CMOS technology, the proposed LNA packaged in quad-flat no-leads package module achieves a maximum power gain of 20.5 dB, NF of 2-2.5 dB, 3-dB bandwidth from 0.4 to 2.2 GHz, and third-order inter modulation intercept the point of -5 dBm while consuming 25 mA current (including buffer) from 1.2 V supply.

引用

页码：11 / 15

页数：5

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