Impact of Alpha-Radiation on Power MOSFETs

被引：0

作者：

Schindler, G. ^{[1
]}

Bach, K. -H. ^{[1
]}

Nelle, P. ^{[1
]}

Deckers, M. ^{[1
]}

Knapp, A. ^{[1
]}

Ermisch, K. ^{[1
]}

Feuerbaum, C. ^{[1
]}

v Emden, W. ^{[2
]}

机构：

[1] Infineon Technol, Qual Management & Automot Div, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Robert Bosch GmbH, Power Semicond Components, Tubinger Str 123, D-72762 Reutlingen, Germany

来源：

2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2016年

关键词：

Power MOSFET; threshold voltage; solder; alpha radiation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper it is shown how the impact of alpha particles in the gate oxide of a power MOSFET leads to a local reduction of the threshold voltage Vth. Evidence is presented that radioactive impurities in the solder material of the clip attach indeed are the root cause for such effects observed in long term measurements with electrical gate bias. Data show that alpha impacts have no negative influence on reliability and application performance of power MOSFETs.

引用

页数：5

共 50 条

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