Electronic structures and optical properties of nitrogen-doped SiC nanotube

被引：1
|
作者：
Song, Jiuxu [1 ]
Yang, Yintang [2 ]
Liu, Hongxia [2 ]
机构：
[1] Xian Shiyou Univ, Sch Elect Engn, Xian, Peoples R China
[2] Xidian Univ, Sch Microelect, Xian, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
electronic structures; optical properties; SiC nanotube; first principle calculation; SILICON-CARBIDE NANOTUBES; CARBON NANOTUBES;
D O I：
10.1109/EDSSC.2009.5394203
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic structures and optical properties of the nitrogen doped silicon carbide nanotube (SiCNT) are studied with first principle calculation. A depression is formed near the doped nitrogen atom and the band gap of the SiCNT is narrowed by the doping. The optical properties of the SiCNT are also changed obviously.
引用
收藏
页码：509 / +
页数：3
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