Passivation of inkjet printed organic thin-film transistor

被引:0
|
作者
Song, Dae Ho [1 ]
Choi, Min Hee [1 ]
Choi, Dae Lim [1 ]
Han, Kyung Tae [1 ]
Sautter, Armin [2 ]
Jang, Jin [1 ]
机构
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] Bayer AG, HC Starck GmbH, D-51368 Leverkusen, Germany
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated printed organic thin-film transistor (OTFT) using a,w-dihexylquaterthiophene (DH4T) and passivated it to protect organic semiconductor from O-2 and H2O. The passivation layer on the DH4T was formed with use of poly-para-xylylene (parylene-C). The passivation slightly decreases its on-state current and field-effect mobility. The OTFT after the passivation exhibited the field-effect mobility of 0,013 cm(2)/Vs, threshold voltage of -1.44 V, and on/off ratio of similar to 10(6). We also investigated the instability of the OTFT under the gate bias stress and found that the threshold voltage shifted a little.
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页码:781 / +
页数:2
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