Coplanar waveguides on silicon substrate with thick oxidized porous silicon (OPS) layer

被引：32
|
作者：
Nam, CM [1 ]
Kwon, YS [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 11期
关键词：
coplanar waveguide (CPW); oxidized porous silicon (OPS); silicon substrate;
D O I：
10.1109/75.736246
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The problem of high dielectric loss of waveguide on silicon in the microwave region can be solved by utilizing a thick silicon dioxide layer that is formed by silicon substrate anodization and oxidation processes. Coplanar waveguides (CPW's) are fabricated on silicon substrate with a 20-mu m-thick oxidized porous silicon (OPS) layer and demonstrate very high performance of 0.1-dB/mm attenuation at 4 GHz, Thus, the OPS process is promising for gigaherz applications of silicon substrates.
引用
收藏
页码：369 / 371
页数：3
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