Silicon-based on-chip electrically tunable sidewall Bragg grating Fabry-Perot filter

被引：48
|
作者：
Zhang, Weifeng [1 ]
Ehteshami, Nasrin [1 ]
Liu, Weilin [1 ]
Yao, Jianping [1 ]
机构：
[1] Univ Ottawa, Sch Elect Engn & Comp Sci, Microwave Photon Res Lab, Ottawa, ON K1N 6N5, Canada
来源：
OPTICS LETTERS | 2015年 / 40卷 / 13期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1364/OL.40.003153
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the design, fabrication, and testing of a silicon-based on-chip electrically tunable sidewall Bragg grating Fabry-Perot filter. Spectral measurement shows that the filter has a narrow notch in reflection of approximately 46 pm, a Q-factor of 33,500, and an extinction ratio of 16.4 dB. DC measurement shows that the average central wavelength shift rates with forward and reverse bias are -1.15 nm/V and 4.2 pm/V, respectively. Due to strong light confinement in the Fabry-Perot cavity, the electrooptic frequency response shows that the filter has a 3-dB modulation bandwidth of similar to 5.6 GHz. The performance of using the filter to perform modulation of a 3.5 Gb/s 2(7)- 1 nonreturn-to-zero pseudorandom binary sequence is evaluated. (C) 2015 Optical Society of America
引用
收藏
页码：3153 / 3156
页数：4
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