Influence of magnetic field and ferromagnetic film thickness on domain pattern transfer in multiferroic heterostructures

被引:2
|
作者
Gonzalez, Diego Lopez [1 ]
Casiraghi, Arianna [1 ]
Kronast, Florian [2 ]
Franke, Kevin J. A. [1 ]
van Dijken, Sebastiaan [1 ]
机构
[1] Aalto Univ, Sch Sci, Dept Appl Phys, NanoSpin, POB 15100, FI-00076 Aalto, Finland
[2] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany
基金
欧洲研究理事会;
关键词
ELECTRIC-FIELD; LOCAL MAGNETIZATION; ION IRRADIATION; REVERSAL;
D O I
10.1016/j.jmmm.2017.06.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on domain pattern transfer from a ferroelectric BaTiO3 substrate to a CoFeB wedge film with a thickness of up to 150 nm. Strain coupling to domains in BaTiO3 induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO3' substrate correlate fully and straight ferroelectric domain boundaries in BaTiO3 pin magnetic domain walls in CoFeB. We use X- ray photoemission electron microscopy and magneto-optical Kerr effect microscopy to characterize the spin structure of the pinned domain walls. In a rotating magnetic field, abrupt and reversible transitions between two domain wall types occur, namely, narrow walls where the magnetization vectors align head-to-tail and much broader walls with alternating head-to-head and tail-to-tail magnetization configurations. We characterize variations of the domain wall spin structure as a function of magnetic field strength and CoFeB film thickness and compare the experimental results with micromagnetic simulations. (C) 2017 Elsevier B.V. All rights reserved.
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页码:404 / 408
页数:5
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