Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy

被引：24
|
作者：
Lin, Hai [1 ]
Chen, Robert [2 ]
Huo, Yijie [2 ]
Kamins, Theodore I. [2 ]
Harris, James S. [2 ]
机构：
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 11期
关键词：
GeSn alloy; Molecular beam epitaxy; Strain; Structural characterization; Epitaxial growth; ALLOYS;
D O I：
10.1016/j.tsf.2012.01.047
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality Ge1-xSnx thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge1-xSnx thin film without Sn precipitation, as verified by transmission electron microscopy. Roughened surfaces are found for tensile strained Ge1-xSnx layers. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：3927 / 3930
页数：4
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