The challenge of high volume 193mn semiconductor manufacturing

被引：0
|
作者：
Schröder, UP [1 ]
Poelders, S [1 ]
Fischer, T [1 ]
Schumacher, K [1 ]
Kiss, A [1 ]
Frangen, A [1 ]
Nees, D [1 ]
Kubis, M [1 ]
Erley, G [1 ]
Janke, B [1 ]
机构：
[1] Infineon Technol SC300 GmbH & Co OHG, Dresden, Germany
来源：
Optical Microlithography XVIII, Pts 1-3 | 2005年 / 5754卷
关键词：
193nm; photoresist; laser; mask; defects;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper discusses issues encountered in 193nm lithography high volume production. In order to debug the new 193nm technology, a layer from an older qualified technology was qualified on the new tools. Tool statistics were benchmarked against the installed 248nm tool base. Several issues not known from 248nm lithography or from low volume R&D type pilot runs on 193nm were uncovered. Specifically, issues related to aging of optical parts, defects from various sources, track processing, and masks are discussed.
引用
收藏
页码：177 / 184
页数：8
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