Ultradense silicon nanowire arrays produced via top-down planar technology

被引：12
|
作者：
Ferri, M. [2 ]
Suriano, F. [2 ]
Roncaglia, A. [2 ]
Solmi, S. [2 ]
Cerofolini, G. F. [1 ]
Romano, E. [1 ]
Narducci, D. [1 ]
机构：
[1] Univ Milano Bicocca, CNISM, I-20125 Milan, Italy
[2] IMM CNR, I-40100 Bologna, Italy
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 06期
关键词：
Silicon nanowires; Top-down processing; Electrical characteristics; SCIENCE-AND-TECHNOLOGY; ELECTRONICS; CHEMISTRY; PHYSICS;
D O I：
10.1016/j.mee.2010.11.034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A process is developed for the fabrication of vertically arranged poly-silicon nanowires via a rigorously top-down batch process. The technique allows the production of wire arrays with larger linear density (projected on the surface) than those achievable with any of the other proposed top-down processes. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：877 / 881
页数：5
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