Characterization and analysis of microelectronic processes using Raman spectroscopy

We have shown that our integrated defect review station plus Raman spectrometer has multiple applications in the microelectronics-manufacturing environment. The system we have configured couples a Leica INM200 (TM) microscope with defect review software to a Renishaw System 2000 Raman Spectrometer. This system allows us to navigate a 200 mm wafer to within 5 microns of the site of interest. One application for this system is the monitoring of metal silicide phase transformations and thickness. Secondly, the crystallinity of polysilicon can be monitored at various stages in the manufacturing process. Lastly, the defect review capability allows us to chemically analyze micron size defects with ease. Raman spectroscopy is nondestructive, requires no sample preparation, has a high spatial resolution and is quick (5-30 seconds), thus it is an ideal candidate as an in-line process monitor and analysis tool.