Lattice-Contraction-Induced Moire Patterns in Direction-Controlled Epitaxial Graphene on Cu(111)

被引：17

作者：

Lim, Hyunseob ^{[1
]}

Jung, Jaehoon ^{[1
]}

Yang, Hyun Jin ^{[1
,2
]}

Kim, Yousoo ^{[1
]}

机构：

[1] RIKEN, Surface & Interface Sci Lab, Wako, Saitama 3510198, Japan

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

来源：

ADVANCED MATERIALS INTERFACES | 2014年 / 1卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; HIGH-QUALITY; LARGE-AREA; COPPER; GROWTH; FILMS; STRAIN; NANOISLANDS; MECHANISM; SAPPHIRE;

D O I：

10.1002/admi.201300080

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Contrary to the general understanding, direction controlled epitaxial graphenes with an identical rotational angle (R θ = R0) is reported. Despite the identical Rθ, various Moire patterns with different periodicity are observed, which cannot be understood by conventional Rθ dependence. A new method is suggested for practical analysis, in which degree of lattice contraction of EG results in the various Moire superstructures. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：5