Ternary Logic with Stateful Neural Networks Using a Bilayered TaOX-Based Memristor Exhibiting Ternary States

被引:24
|
作者
Kim, Young Seok [1 ]
An, Jangho [1 ]
Jeon, Jae Bum [1 ]
Son, Myeong Won [1 ]
Son, Seoil [1 ]
Park, Woojoon [1 ]
Lee, Younghyun [1 ]
Park, Juseong [1 ]
Kim, Geun Young [1 ]
Kim, Gwangmin [1 ]
Song, Hanchan [1 ]
Kim, Kyung Min [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
in-memory computing; memristors; neural networks; stateful logic; ternary logic; MEMORY; OPERATIONS;
D O I
10.1002/advs.202104107
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A memristive stateful neural network allowing complete Boolean in-memory computing attracts high interest in future electronics. Various Boolean logic gates and functions demonstrated so far confirm their practical potential as an emerging computing device. However, spatio-temporal efficiency of the stateful logic is still too limited to replace conventional computing technologies. This study proposes a ternary-state memristor device (simply a ternary memristor) for application to ternary stateful logic. The ternary-state implementable memristor device is developed with bilayered tantalum oxide by precisely controlling the oxygen content in each oxide layer. The device can operate 157 ternary logic gates in one operational clock, which allows an experimental demonstration of a functionally complete three-valued Lukasiewicz logic system. An optimized logic cascading strategy with possible ternary gates is approximate to 20% more efficient than conventional binary stateful logic, suggesting it can be beneficial for higher performance in-memory computing.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Evolutionary Learning of Binary Neural Network Using a TaOx Memristor via Stochastic Stateful Logic
    Kim, Do Hoon
    Kim, Young Seok
    Cheong, Woon Hyung
    Song, Hanchan
    Rhee, Hakseung
    Kay, Sooyeon Narie
    Han, Jin-Woo
    Kim, Kyung Min
    ADVANCED INTELLIGENT SYSTEMS, 2022, 4 (09)
  • [2] Memristor based unbalanced ternary logic gates
    Khalid, Muhammad
    Singh, Jawar
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2016, 87 (03) : 399 - 406
  • [3] Memristor based unbalanced ternary logic gates
    Muhammad Khalid
    Jawar Singh
    Analog Integrated Circuits and Signal Processing, 2016, 87 : 399 - 406
  • [4] Memristor-CNTFET based ternary logic gates
    Soliman, Nancy S.
    Fouda, Mohammed E.
    Radwan, Ahmed G.
    MICROELECTRONICS JOURNAL, 2018, 72 : 74 - 85
  • [5] Ternary logic gate and multiplier design based on binary memristor
    Wu J.
    Zhu Y.
    Zhong Y.
    Huazhong Keji Daxue Xuebao (Ziran Kexue Ban)/Journal of Huazhong University of Science and Technology (Natural Science Edition), 2024, 52 (03): : 14 - 19and27
  • [6] Novel CNTFET and Memristor based Unbalanced Ternary Logic Gate
    Mohammed, Mahmood Uddin
    Vijjapuram, Rakesh
    Chowdhury, Masud H.
    2018 IEEE 61ST INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2018, : 1106 - 1109
  • [7] Stateful In-Memory Logic System and Its Practical Implementation in a TaOx-Based Bipolar-Type Memristive Crossbar Array
    Kim, Young Seok
    Son, Myeong Won
    Song, Hanchan
    Park, Juseong
    An, Jangho
    Jeon, Jae Bum
    Kim, Geun Young
    Son, Seoil
    Kim, Kyung Min
    ADVANCED INTELLIGENT SYSTEMS, 2020, 2 (03)
  • [8] Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network
    Renaudineau, A.
    Harabi, K-E.
    Turck, C.
    Laborieux, A.
    Vianello, E.
    Bocquet, M.
    Portal, J-M.
    Querlioz, D.
    2023 SILICON NANOELECTRONICS WORKSHOP, SNW, 2023, : 43 - 44
  • [9] Defect-Tolerant Crossbar Training of Memristor Ternary Neural Networks
    Pham, Khoa Van
    Nguyen, Tien Van
    Min, Kyeong-Sik
    2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2019, : 486 - 489
  • [10] Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer
    Kim, Juri
    Park, Yongjin
    Lee, Jung-Kyu
    Kim, Sungjun
    JOURNAL OF CHEMICAL PHYSICS, 2023, 159 (21):