57Fe diffusion in n-type Si after GeV implantation of 57Mn

被引：7

作者：

Yoshida, Y. ^{[1
]}

Kobayashi, Y.

Yukihira, K. ^{[1
]}

Hayakawa, K. ^{[1
]}

Suzuki, K. ^{[1
]}

Yoshida, A.

Ueno, H.

Yoshimi, A.

Shimada, K.

Nagae, D.

Asahi, K. ^{[3
]}

Langouche, G. ^{[2
]}

机构：

[1] Shizuoka Inst Sci & Technol, Shizuoka, Japan

[2] Katholieke Univ Leuven, Louvain, Belgium

[3] Tokyo Inst Technol, Tokyo, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

关键词：

iron impurity; Si; fast diffusion; Mossbauer spectroscopy;

D O I：

10.1016/j.physb.2007.08.122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

At the RI-beam facility of the RIKEN, Mn-57/Fe-57 isotopes are separated and implanted into n-type FZ-Si (6 x 10(16) As/cm(3)), and subsequently the atomic jump processes of Fe-57 in the Si matrix are observed by Mossbauer spectroscopy on a time scale of 100 ns between 330 and 1200 K. The spectra consist of two components due to "interstitial Fe" and "substitutional Fe", both of which yield the same isomer shifts as those reported in p-type Si, showing long-range diffusion with increasing temperature. The spectra are compared with those simulated from a theoretical model. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：101 / 104

页数：4

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