Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

被引：239

作者：

Joseph, M ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Li-doped ZnO of different compositions (Zn1-xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance-voltage measurements. The peak maximum in the capacitance-temperature curve suggests that the ferroelectric phase transition occurs around 340 K. (C) 1999 American Institute of Physics. [S0003-6951(99)01617-4].

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页码：2534 / 2536

页数：3

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