Design Rules for High Performance Tunnel Transistors From 2-D Materials

Tunneling field-effect transistors (TFETs) based on 2-D materials are promising steep sub-threshold swing devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2-D TFETs: 1) electrical and 2) chemical doping. In this paper, design guidelines for both electrically and chemically doped 2-D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2-D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e., constant ON-current plot).