Plasma-assisted synthesis and pressure-induced structural transition of single-crystalline SnSe nanosheets

被引:72
|
作者
Zhang, Jian [1 ]
Zhu, Hongyang [1 ]
Wu, Xiaoxin [1 ]
Cui, Hang [3 ]
Li, Dongmei [1 ]
Jiang, Junru [1 ]
Gao, Chunxiao [1 ]
Wang, Qiushi [2 ]
Cui, Qiliang [1 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
[2] Bohai Univ, Coll New Energy, Jinzhou 121013, Liaoning, Peoples R China
[3] Jilin Univ, Coll Phys, Changchun 130012, Jilin, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; SOLUTION-PHASE SYNTHESIS; THIN-FILMS; SEMICONDUCTOR NANOCRYSTALS; CDSE NANOCRYSTALS; BAND-STRUCTURE; TRANSFORMATION; TEMPERATURE; MECHANISM; SUPERCONDUCTIVITY;
D O I
10.1039/c5nr02131f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional tin selenide (SnSe) nanosheets were synthesized using a plasma-assisted direct current arc discharge method. The structural characterization indicates that the nanosheets are single-crystalline with an average thickness of similar to 25 nm and a lateral dimension of similar to 500 nm. The high pressure behaviors of the as-synthesized SnSe nanosheets were investigated by in situ high-pressure synchrotron angle-dispersive X-ray diffraction and Raman scattering up to similar to 30 GPa in diamond anvil cells at room temperature. A second-order isostructural continuous phase transition (Pnma -> Cmcm) was observed at similar to 7 GPa, which is considerably lower than the transition pressure of bulk SnSe. The reduction of transition pressure is induced by the volumetric expansion with softening of the Poisson ratio and shear modulus. Moreover, the measured zero-pressure bulk modulus of the SnSe nanosheets coincides with bulk SnSe. This abnormal phenomenon is attributed to the unique intrinsic geometry in the nanosheets. The high-pressure bulk modulus is considerably higher than the theoretical value. The pressure-induced morphology change should be responsible for the improved bulk modulus.
引用
收藏
页码:10807 / 10816
页数:10
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