Fabrication of single-crystal lithium niobate films by crystal ion slicing

被引：298
|
作者：
Levy, M [1 ]
Osgood, RM
Liu, R
Cross, LE
Cargill, GS
Kumar, A
Bakhru, H
机构：
[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA
[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[3] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
[4] SUNY Albany, Dept Phys, Albany, NY 12222 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期
关键词：
D O I：
10.1063/1.121801
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-mu m-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films. (C) 1998 American Institute of Physics. [S0003-6951(98)04142-4].
引用
收藏
页码：2293 / 2295
页数：3
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