Electron and hole states in vertically coupled self-assembled InGaAs quantum dots

被引：0

作者：

Korkusinski, M ^{[1
]}

Sheng, W ^{[1
]}

Hawrylak, P ^{[1
]}

Wasilewski, Z ^{[1
]}

Ortner, G ^{[1
]}

Bayer, M ^{[1
]}

Babinski, A ^{[1
]}

Potemski, M ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report results of theoretical and experimental study of optical properties of vertically coupled self-assembled InGaAs quantum dots. The: theoretical calculations include atomistic tight-binding model in the effective-bond-orbital approximation coupled with Peierls substitution to include the magnetic field and with valence-force-field model to include strain and piezoelectricity. The single particle states are used to calculate the exciton and biexciton spectra in the exact diagonalization approach. The calculated emission spectra are compared with emission measurements of a single pair of InAs/GaAs vertically coupled quantum dots in a magnetic field.

引用

页码：685 / 686

页数：2

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