Electromigration behavior of Cu/Sn-58Bi-1Ag/Cu solder joints by ultrasonic soldering process

被引:5
|
作者
Liu, Shengfa [1 ]
Liu, Zhangyang [1 ]
Liu, Li [1 ]
Song, Tianjie [1 ]
Liu, Wei [1 ]
Tan, Yingzhen [1 ]
San, Zhanyi [1 ]
Huang, Shangyu [1 ]
机构
[1] Wuhan Univ Technol, Sch Mat Sci & Engn, 122 Luoshi Rd, Wuhan, Peoples R China
基金
中国国家自然科学基金;
关键词
RAPID SOLIDIFICATION; MICROSTRUCTURE; LAYER;
D O I
10.1007/s10854-020-03817-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sn-58Bi-1Ag solder ribbon was prepared by twin-roll rapid solidification technology, and the ultrasonic soldering process was used to prepare Cu/Sn-58Bi-1Ag/Cu linear solder joints. Electron probe microanalysis (EPMA) and energy dispersive X-ray spectroscopy (EDS) were used to study the interface morphology of intermetallic compounds (IMC), Bi segregation, and solder joint matrix microstructure evolution with the current density of 1 x 10(4)A/cm(2)(25 degrees C). The result shows that the morphology of the anode IMC layer changes from scallop-like to hilly-like and then to flat-plate-like with the electrification time, and the thickness of IMC layer increases gradually. Bi is segregated toward the anode to form a Bi-rich layer. The cathode IMC layer is changed from a scallop to a zigzag, and its thickness is firstly increased and then decreased. The Sn is segregated toward the cathode to finally form a beta-Sn-rich layer. Coarsening of eutectic microstructure (beta-Sn+Bi) in solder joint matrix was caused by prolonged time. Based on linear fitting, the kinetic index n of the IMC layer of the anode and cathode is 0.432 and 0.491, respectively, and the growth mechanism is supposed to be volume diffusion. Ultrasonic soldering techniques can refine the Bi phase and increase the solubility of Bi in beta-Sn, which slows down the formation of Bi-rich layers. The addition of Ag forms wedge-shaped and granular Ag3Sn intermetallic compounds, which hinders the growth of the Bi-rich layer and the Cu6Sn5IMC, thus effectively inhibiting the electromigration process.
引用
收藏
页码:11997 / 12003
页数:7
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