Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs

被引:2
|
作者
Baveja, Prashant P. [1 ]
Kogel, Benjamin [2 ]
Westbergh, Petter [2 ]
Gustavsson, Johan S. [2 ]
Haglund, Asa [2 ]
Maywar, Drew N. [3 ]
Agrawal, Govind P. [1 ]
Larsson, Anders [2 ]
机构
[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
[2] Chalmers, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[3] Rochester Inst Technol, Dept Elect Comp Telecommun Engn Technol, Rochester, NY 14623 USA
基金
美国国家科学基金会; 瑞典研究理事会;
关键词
vertical cavity surface emitting lasers; thermal effects; carrier leakage; photon lifetime; SURFACE-EMITTING LASERS; PERFORMANCE; PARAMETERS;
D O I
10.1117/12.906784
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
引用
收藏
页数:11
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