Improved performance of GaN-based light-emitting diodes with high-quality GaN grown on InN islands

被引:3
|
作者
Lee, Sang-Jun [1 ]
Cho, Chu-Young [1 ]
Hong, Sang-Hyun [1 ]
Han, Sang-Heon [1 ,3 ]
Yoon, Sukho [3 ]
Park, Yongjo [3 ]
Park, Seong-Ju [1 ,2 ]
机构
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
[3] Samsung LED Co Ltd, Suwon 443743, South Korea
关键词
VAPOR-PHASE EPITAXY; THIN-FILMS; DEPOSITION; DENSITY;
D O I
10.1088/0022-3727/44/42/425101
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of GaN grown on InN islands on InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) is investigated. The pit density of GaN grown on InN islands is decreased and the photoluminescence intensity of GaN grown on InN islands is increased compared with those of GaN without InN islands. The LEDs fabricated with GaN grown on InN islands show higher optical output power and lower reverse-bias leakage current than the LEDs without InN islands. These enhancements are attributed to the InN islands which reduce the threading dislocations and stress of GaN and MQWs.
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页数:5
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