R&D of C-Band Accelerating Structure at SINAP

被引：0
|
作者：
Gu, Qiang [1 ]
Fang, Wencheng [1 ]
Zhao, Zhentang [1 ]
Tong, Dechun [2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Appl Phys, FEL Div, Shanghai 201800, Peoples R China
[2] Tsinghua Univ, DEP, Beijing 100018, Peoples R China
来源：
High Gradient Accelerating Structure | 2015年
关键词：
FACILITY; DESIGN;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
R&D of a C-band (5712 MHz) high gradient traveling-wave accelerating structure has been in progress at Shanghai Institute of Applied Physics (SINAP). The prototype and new C-band accelerating structures have already been fabricated. In this paper, some details of R&D are introduced.
引用
收藏
页码：143 / 149
页数：7
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