Physical and numerical modeling of a dynamic contact line with phase-change

被引：0
|
作者：
Mathieu, B [1 ]
Lebaigue, O
Tadrist, L
机构：
[1] CEA, Grenoble, France
[2] IUSTI, Marseille, France
来源：
HOUILLE BLANCHE-REVUE INTERNATIONALE DE L EAU | 2003年 / 05期
关键词：
D O I：
10.1051/lhb/2003094
中图分类号：
TV21 [水资源调查与水利规划];
学科分类号：
081501 ;
摘要：
Physical and numerical modeling of a dynamic contact line with phase change. A dynamic contact line model is built using a slip condition at small scale. This model includes heat transfer in the solid and the liquid recoil pressure and interface resistance. The effect of contact line displacement and phase change on the contact angle and the heat flux is studied. Different regimes are investigated depending on physical and geometrical parameters.
引用
收藏
页码：84 / 91
页数：8
相关论文
共 50 条
  • [1] NUMERICAL MODELING OF PHASE-CHANGE IN FREEZING AND THAWING UNSATURATED SOIL
    ENGELMARK, H
    SVENSSON, U
    NORDIC HYDROLOGY, 1993, 24 (2-3) : 95 - 110
  • [2] Phase-change material modeling within whole building dynamic simulation
    Heim, Dariusz
    ASHRAE Transactions 2006, Vol 112, Pt 1, 2006, 112 : 518 - 525
  • [3] Numerical methods in phase-change problems
    Idelsohn, Sergio R.
    Storti, Mario A.
    Crivelli, Luis A.
    ARCHIVES OF COMPUTATIONAL METHODS IN ENGINEERING, 1994, 1 (01) : 49 - 74
  • [4] NUMERICAL SOLUTION OF PHASE-CHANGE PROBLEMS
    BONACINA, C
    COMINI, G
    FASANO, A
    PRIMICERIO, M
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1973, 16 (10) : 1825 - 1832
  • [5] Physical properties of phase-change emulsions
    Evans, Drew R.
    Parsons, Drew F.
    Craig, Vincent S. J.
    LANGMUIR, 2006, 22 (23) : 9538 - 9545
  • [6] Contact size scaling of a W-contact phase-change memory cell based on numerical simulation
    魏益群
    林信南
    贾宇超
    崔小乐
    张兴
    宋志棠
    半导体学报, 2012, 33 (10) : 53 - 57
  • [7] Contact size scaling of a W-contact phase-change memory cell based on numerical simulation
    Wei Yiqun
    Lin Xinnan
    Jia Yuchao
    Cui Xiaole
    Zhang Xing
    Song Zhitang
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (10)
  • [8] Read Disturbances in Cross-Point Phase-Change Memory Arrays- Part I: Physical Modeling With Phase-Change Dynamics
    Kim, Donguk
    Jang, Jun Tae
    Kim, Changwook
    Kim, Hyun Wook
    Hong, Eunryeong
    Ban, Sanghyun
    Shin, Minchul
    Lee, Hanwool
    Lee, Hyung Dong
    Mo, Hyun-Sun
    Woo, Jiyong
    Kim, Dae Hwan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (02) : 514 - 520
  • [9] Modeling InSe phase-change materials
    Kohary, K
    Burlakov, VM
    Nguyen-Manh, D
    Pettifor, DG
    ADVANCED DATA STORAGE MATERIALS AND CHARACTERIZATION TECHNIQUES, 2004, 803 : 173 - 178
  • [10] Compact Modeling of phase-change memories
    Sonoda, K.
    Sakai, A.
    Moniwa, M.
    Ishikawa, K.
    Tsuchiya, O.
    Inoue, Y.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 137 - 140
12345