Planar Asymmetric Semiconductor Nanodiodes for THz Detection

被引：0

作者：

Mateos, J. ^{[1
]}

Iniguez-de-la-Torre, I. ^{[1
]}

Perez, S. ^{[1
]}

Sanchez-Martin, H. ^{[1
]}

Novoa, J. A. ^{[1
]}

Ducournau, G. ^{[2
]}

Gaquiere, C. ^{[2
]}

Gonzalez, T. ^{[1
]}

机构：

[1] Univ Salamanca, Dept Appl Phys, E-37008 Salamanca, Spain

[2] IEMN, F-59652 Villeneuve Dascq, France

来源：

2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-switching diodes (SSD), semiconductor nanodevices exhibiting a non-linear I-V curve, fabricated on a variety of material systems, are investigated here as terahertz detectors. Their working principle is based on the asymmetry of a conductive nano-channel defined by the etching two L-shaped insulating trenches, leading to a non-linear I-V relation that enables zero bias AC detection up to terahertz frequencies.

引用

页数：2

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