Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors

被引：8

作者：

Yamazaki, Kenji ^{[1
]}

Yamaguchi, Hiroshi ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

基金：

日本学术振兴会;

关键词：

ELECTRON-BEAM LITHOGRAPHY; FABRICATION;

D O I：

10.1143/APEX.3.106501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have devised a new resist-coating method using spin coating for creating three-dimensional (3D) nanostructures in semiconductors. Using this method, we were able to successfully coat poly(methyl methacrylate) (PMMA) films on the vertical side faces of micrometer-order Si blocks. The use of a solvent with low viscosity was found to be effective for obtaining good uniformity in resist thickness. Moreover, Monte Carlo simulations of electron scattering revealed that fine patterning on both the opposite side faces of a Si block should be possible by simultaneous development followed by electron beam (EB) writing from opposite directions, despite electron scattering. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 35 条

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