Characterization of RuO2 and IrO2 films deposited on Si substrate

RuO2 and IrO2 films, deposited on Si substrates hy metal-organic chemical vapor deposition (MOCVD) method and reactive sputtering method under various conditions, were characterized by atomic force microscopy (AFM), X-ray diffraction, electrical conductivity, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The red shift and broadening of the line width of the Raman peaks were analyzed and discussed. (C) 2001 Elsevier Science B.V. All rights reserved.