Coverage-dependent chemisorption of Cl on Si(114)

被引：2
|
作者：
Butera, R. E. [1 ]
Agrawal, Abhishek [1 ]
Weaver, J. H. [1 ]
机构：
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
来源：
SURFACE SCIENCE | 2008年 / 602卷 / 02期
关键词：
scanning tunneling microscopy; Si(114); high-index single crystal surfaces; vicinal single crystal surfaces; chlorine; halogens; chemisorption;
D O I：
10.1016/j.susc.2007.10.051
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The dissociative chemisorption of Cl-2 on Si(1 1 4) was studied at room temperature using scanning tunneling microscopy. Filled and empty state imaging revealed a multitude of possible adsorption configurations with adsorption preferring rebonded atom and dimer sites over tetramer sites. The dissociation and subsequent adsorption processes were sufficiently exothermic that Cl could interrogate the potential energy landscape and find local energy minima. Annealing revealed configurations that preserved the strongest pi-bonds of the (1 1 4) reconstruction. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：475 / 480
页数：6
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