Ab-initio investigation of Er3+ defects in tungsten disulfide

被引:2
|
作者
Lopez-Morales, Gabriel, I [1 ,2 ,3 ]
Hampel, Alexander [4 ]
Lopez, Gustavo E. [2 ,3 ]
Menon, Vinod M. [1 ,3 ]
Flick, Johannes [4 ]
Meriles, Carlos A. [1 ,3 ]
机构
[1] CUNY, Dept Phys, City Coll, New York, NY 10031 USA
[2] CUNY, Dept Chem, Lehman Coll, Bronx, NY 10468 USA
[3] CUNY, Grad Ctr, New York, NY 10016 USA
[4] Flatiron Inst, Ctr Computat Quantum Phys, New York, NY 10010 USA
基金
美国国家科学基金会;
关键词
Rare-earth ions; Point defects; Tungsten disulfide; Optoelectronic properties; Density functional theory; DOPED ZNO; EXCHANGE; SPINS; TIME;
D O I
10.1016/j.commatsci.2021.111041
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use density functional theory (DFT) to explore the physical properties of an Er-w point defect in monolayer WS2. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy (Vw) and at the Er3+ ion site, even in the presence of a net negative charge in the supercell. The system features a set of intra-gap defect states, some of which are reminiscent of those present in isolated Er3+ ions. In both instances, the level of hybridization is low, i.e., orbitals show either strong Er or W character. Through the calculation of the absorption spectrum as a function of wavelength, we identify a broad set of transitions, including one possibly consistent with the Er3+ I-4(15/2) -> I-4(13/2) observed in other hosts. Combined with the low native concentration of spin-active nuclei as well as the two-dimensional nature of the host, these properties reveal Er:WS2 as a potential platform for realizing spin qubits that can be subsequently integrated with other nanoscale optoelectronic devices.
引用
收藏
页数:6
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