Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

被引：1

作者：

Wang, YQ ^{[1
]}

Liao, XB ^{[1
]}

Diao, HW ^{[1
]}

He, J ^{[1
]}

Ma, ZX ^{[1
]}

Yue, GZ ^{[1
]}

Shen, SR ^{[1
]}

Kong, GL ^{[1
]}

Zhao, YW ^{[1
]}

Li, ZM ^{[1
]}

Yun, F ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-975

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

引用

页码：975 / 980

页数：6

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