The role of water in resistive switching in graphene oxide

被引：17

作者：

Rogala, M. ^{[1
]}

Kowalczyk, P. J. ^{[1
]}

Dabrowski, P. ^{[1
]}

Wlasny, I. ^{[1
]}

Kozlowski, W. ^{[1
]}

Busiakiewicz, A. ^{[1
]}

Pawlowski, S. ^{[1
]}

Dobinski, G. ^{[1
]}

Smolny, M. ^{[1
]}

Karaduman, I. ^{[2
]}

Lipinska, L. ^{[3
]}

Kozinski, R. ^{[3
]}

Librant, K. ^{[3
]}

Jagiello, J. ^{[3
]}

Grodecki, K. ^{[3
]}

Baranowski, J. M. ^{[3
]}

Szot, K. ^{[4
]}

Klusek, Z. ^{[1
]}

机构：

[1] Univ Lodz, Fac Phys & Appl Informat, Dept Solid State Phys, PL-90236 Lodz, Poland

[2] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey

[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[4] Univ Silesia, Inst Phys, PL-40007 Katowice, Poland

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 26期

关键词：

FILMS; REDUCTION; NANOLITHOGRAPHY; MICROSCOPY; MEMRISTOR; SHEETS;

D O I：

10.1063/1.4923323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistive switching processes are investigated at the nano-scale in graphene oxide. The modification of the material resistivity is driven by the electrical stimulation with the tip of atomic force microscope. The presence of water in the atmosphere surrounding graphene oxide is found to be a necessary condition for the occurrence of the switching effect. In consequence, the switching is related to an electrochemical reduction. Presented results suggest that by changing the humidity level the in-plane resolution of data storage process can be controlled. These findings are essential when discussing the concept of graphene based resistive random access memories. (C) 2015 AIP Publishing LLC.

引用

页数：4

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