Anomalous structural evolution and √3x√3 reconstruction of a clean Si(111) surface observed after thermal desorption of thallium

被引:1
|
作者
Kocan, Pavel [1 ]
Krejci, Ondrej [1 ,2 ]
Tochihara, Hiroshi [3 ,4 ,5 ]
机构
[1] Charles Univ Prague, Fac Math & Phys, CR-18000 Prague 8, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague, Czech Republic
[3] Kyushu Univ, Dept Mol & Mat Sci, Kasuga, Fukuoka 8168580, Japan
[4] Fukuoka Univ, Dept Elect Engn & Comp Sci, Fukuoka 8140180, Japan
[5] Kyushu Univ, Kasuga, Fukuoka 8168580, Japan
来源
关键词
SCANNING-TUNNELING-MICROSCOPY; ELECTRON-DIFFRACTION; 5X5; RECONSTRUCTION; SILICON; TRANSFORMATION; ADSORPTION; GERMANIUM; MECHANISM; KINETICS; DENSITY;
D O I
10.1116/1.4913199
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The authors have observed anomalous structural evolution of a clean Si(111) surface, which was prepared first by thallium (Tl) deposition on a Si(111)7 x 7 surface, leading to incomplete formation of a Tl/Si(111)1 x 1 structure at 300 degrees C and subsequent desorption of Tl at 350 degrees C. Thus prepared clean Si(111) surfaces exhibit structural changes with increase of temperature: 2 x 1 -> (root 3 x root 3)R30 degrees -> 2 x 1 -> 5 x 5 -> 7 x 7, as observed by low-energy electron diffraction and scanning tunneling microscopy. Among the above structures, the (root 3 x root 3)R30 degrees formed at 450-550 degrees C is found not to be a simple adatom structure. Instead, by means of ab-initio calculations a new metastable (root 3 x root 3)R30 degrees reconstruction was found, having analogous structural features and formation origin to a 2 x 1 reconstruction known as the Pandey chain model. This new (root 3 x root 3)R30 degrees model is 0.09 eV per surface atom less favorable than the 2 x 1 reconstruction. A reason for the anomalous occurrence of the (root 3 x root 3)R30 degrees structure is explored with an aid of Monte Carlo simulations. (C) 2015 American Vacuum Society.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Thermal evolution of the morphology of Ni/Ag/Si(111)-√3x√3 surface
    Tomaszewska, Agnieszka
    Huang, Xiao-Lan
    Chang, Kuo-Wei
    Fu, Tsu-Yi
    THIN SOLID FILMS, 2012, 520 (21) : 6551 - 6555
  • [2] Surface electronic structure of Mn/Si(111)-√3x√3
    Hirvonen Grytzelius, J.
    Zhang, H. M.
    Johansson, L. S. O.
    PHYSICAL REVIEW B, 2008, 78 (15)
  • [3] Surface atomic structure of Ag/Si(111)-√3X√3
    Zhang, H. M.
    Gustafsson, J. B.
    Johansson, L. S. O.
    PHYSICAL REVIEW B, 2006, 74 (20):
  • [4] Step and Domain Boundary Effect of Surface Reconstruction to Si(111)-√3x√3-Ag
    Deng, Dongmei
    Sun, Lina
    Dai, Yurong
    Cao, Shixun
    Bai, Lihua
    Luo, Liqiang
    Zhang, Jincang
    ADVANCES IN CHEMISTRY RESEARCH II, PTS 1-3, 2012, 554-556 : 357 - 361
  • [5] Structural and electronic properties of the Sn/Si(111)√3x √3R30° surface
    Profeta, G
    Continenza, A
    Ottaviano, L
    Mannstadt, W
    Freeman, AJ
    PHYSICAL REVIEW B, 2000, 62 (03): : 1556 - 1559
  • [6] Unoccupied surface states on Si(111)√3x√3-Ag
    Viernow, J
    Henzler, M
    O'Brien, WL
    Men, FK
    Leibsle, FM
    Petrovykh, DY
    Lin, JL
    Himpsel, FJ
    PHYSICAL REVIEW B, 1998, 57 (04): : 2321 - 2326
  • [7] Electronic structure of the β-Si(111) √3x√3-Bi surface
    Kim, YK
    Kim, JS
    Hwang, CC
    Shrestha, SP
    An, KS
    Park, CY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (06) : 1032 - 1035
  • [8] Hydrogen chemisorption on Si(111)√3x√3R30°-B passivated surface studied by thermal desorption and scanning tunneling microscopy
    Aoki, Yuki
    Hirayama, Hiroyuki
    SURFACE SCIENCE, 2011, 605 (15-16) : 1397 - 1401
  • [9] Photoemission study of a thallium induced Si(111)-(√3 x √3) surface
    Sakamoto, Kazuyuki
    Eriksson, P. E. J.
    Ueno, Nobuo
    Uhrberg, R. I. G.
    SURFACE SCIENCE, 2007, 601 (22) : 5258 - 5261
  • [10] Sb atom reconstruction induced by atomic hydrogen interaction with Si(111)√3x√3-Sb surface
    Kubo, O
    Fujino, T
    Ryu, JT
    Oura, K
    Katayama, M
    SURFACE SCIENCE, 2005, 581 (01) : 17 - 23