Er doping of AlN during growth by metalorganic molecular beam epitaxy

The doping of AlN during growth by metalorganic molecular beam epitaxy with an Er effusion source has resulted in AlN:Er films exhibiting strong room-temperature 1.54 mu m photoluminescence (PL). The luminescence detected in the AlN:Er grown during this study was orders of magnitude greater in intensity than that from ion-implanted samples and represents the first demonstration of strong emission from rare-earth doped, epitaxial group III nitrides. Secondary ion mass spectroscopy was used to verify a dynamic range for this doping technique of 3X10(17)-2X10(21) Er cm(-3) with varying effusion cell temperature. The effects of growth temperature on Er incorporation and segregation behavior were also determined. PL studies, including room-temperature and thermal quenching experiments, were conducted. (C) 1996 American Institute of Physics.