Metal-induced laterally crystallized polycrystalline silicon: Technology, devices and systems

被引：0
|
作者：
Wong, Man [1 ]
Meng, Zhiguo [1 ]
Kwok, Hoi S. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
ASID'04: PROCEEDINGS OF THE 8TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY | 2004年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The technology of obtaining polycrystalline silicon by low-temperature, nickel-based, metal-induced laterally crystallized amorphous silicon is reviewed. Further improvement of material and device characteristics can be accomplished by high temperature re-crystallization. Issues regarding crystallization mechanism, leakage current behavior and re-crystallization techniques are briefly discussed. Characteristics of thin-film transistors based on metal-induced unilateral crystallization are presented. Prototype self-scanned liquid-crystal and organic light-emitting diode displays are demonstrated.
引用
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页码：20 / 25
页数：6
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