Improvements in dynamic and noise performance of cryogenic GaAs monolithic ASICs

被引：6

作者：

Camin, DV ^{[1
]}

Fedyakin, N ^{[1
]}

Pessina, G ^{[1
]}

Previtali, E ^{[1
]}

Sironi, M ^{[1
]}

机构：

[1] IST NAZL FIS NUCL,I-20133 MILAN,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.507164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed two new ASICs for cryogenic operation using a GaAs ion-implanted MESFET process. A preamplifier chip for LAr calorimetry has white series noise above 1 MHz with a spectral density of 0.32 nV/root Hz. Power dissipation is 66 mW and GBW 1.7 GHz. Operation at 22 mW power dissipation is also possible, with lower noise and speed performance. A cryogenic buffer/LED driver with 0.6% integral non-linearity for 100 mA maximum output current and 8.7 mW standing power dissipation was also developed.

引用

页码：1649 / 1655

页数：7

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