The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering

被引：44

作者：

Sayago, I ^{[1
]}

Aleixandre, M ^{[1
]}

Arés, L ^{[1
]}

Fernández, MJ ^{[1
]}

Santos, JP ^{[1
]}

Gutiérrez, J ^{[1
]}

Horrillo, MC ^{[1
]}

机构：

[1] CSIC, Lab Sensores, IFA, E-28006 Madrid, Spain

来源：

APPLIED SURFACE SCIENCE | 2005年 / 245卷 / 1-4期

关键词：

ZnO; piezoelectric material; magnetron sputtering; atomic force microscopy; X-ray diffraction;

D O I：

10.1016/j.apsusc.2004.10.035

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of the oxygen concentration and the rf power variation on the zinc oxide films structural properties were studied. ZnO films were deposited on silicon substrate by rf magnetron sputtering in reactive plasma using a zinc oxide target. Crystalline structures and roughness characteristics of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, respectively. Deposition conditions were optimized to obtain films of good quality suitable for the fabrication of surface acoustic wave (SAW) devices. The optimal parameters to obtain a good piezoelectric material have been: rf power 50 W and reactive plasma. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：273 / 280

页数：8

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