Analysis and control of Cu6Sn5 preferred nucleation on single crystal (001)Cu

被引：10

作者：

Ma, H. R. ^{[1
]}

Dong, C. ^{[2
]}

Zhao, N. ^{[2
]}

Wang, Y. P. ^{[2
]}

Li, X. G. ^{[1
]}

Ma, H. T. ^{[2
]}

Chen, J. ^{[2
]}

机构：

[1] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

来源：

MATERIALS LETTERS | 2020年 / 265卷

基金：

中国国家自然科学基金;

关键词：

Cu6Sn5; Crystal growth; Interfaces; EBSD; 3D packaging; GROWTH; CU; SN; THERMOMIGRATION; ORIENTATION; ANISOTROPY; GRAINS; PHASE;

D O I：

10.1016/j.matlet.2020.127327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fully oriented-intermetallic interconnects (FOI) of high melting point and service performance have highly considerable potential application in the current generation of 3D electronic packaging. The primary process of fabrication of this structure is the Cu6Sn5 preferred nucleation. In this article, the orientations of 59 successive Cu6S5 grains along the radius of (0 0 1)Cu/Sn-3.0Ag solder interface were investigated. Finally, an analysis and control model of Cu6Sn5 preferred nucleation determined by chemical potential gradient of Cu migration was established and applied to address and manage the orientation growth of Cu6Sn5 under different reflow temperatures and solder compositions. The results pave the way for orientation controlling of interfacial intermetallics in 3D packaging technologies. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：4

共 50 条

[1] Mechanism and control of preferred Cu6Sn5 growth on single crystal (001)Cu
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