Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator

被引：35
|
作者：
Pease, RL [1 ]
McClure, S
Gorelick, J
Witczak, SC
机构：
[1] RLP Res, Albuquerque, NM 87122 USA
[2] Hughes Aircraft Co, Space & Commun, Los Angeles, CA 90009 USA
[3] Aerospace Corp, Elect Technol Ctr, Los Angeles, CA 90009 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期
关键词：
D O I：
10.1109/23.736499
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (similar to 10 mrad(SiO2)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp output transistor. Significant degradation of this parameter occurs at 5-10 krad(SiO2) at low-dose-rate. A moderate load current (similar to 250mA) during irradiation significantly mitigates the damage. The mitigation of the damage is proportional to irradiation load current and is not a strong function of irradiation temperature or input voltage. The mechanism for the mitigation of damage appears to be current density dependent passivation of interface and/or border traps by mobile hydrogen-related species. The worst-case space system application is in unbiased spares.
引用
收藏
页码：2571 / 2576
页数：6
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