Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes

被引：1
|
作者：
Ivanov, PA
Levinshtein, ME
Mnatsakanov, TT
Palmour, JW
Singh, R
Irvin, KG
Das, M
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] All Russia Electrotech Inst, Moscow 111250, Russia
[3] CREE Inc, Durham, NC 27703 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
silicon carbide; junction diodes; base modulation; minority carrier lifetime; emitter injection coeffecient;
D O I：
10.4028/www.scientific.net/MSF.483-485.973
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p(+)n(0)n(+)-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p(+)-emitter are investigated with respect to device performance at high injection levels.
引用
收藏
页码：973 / 976
页数：4
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