Ferroelectric behaviours of ultra-nano-crystalline diamond thin films

被引：1
|
作者：
Ray, Sekhar C. [1 ]
Lin, I-N [2 ]
机构：
[1] Univ S Africa, Coll Sci Engn & Technol, Dept Phys, Johannesburg, South Africa
[2] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2015年 / 271卷
基金：
新加坡国家研究基金会;
关键词：
UNCD; Current voltage hysteresis loop; I-V hysteresis loop; XPS; FIELD-EMISSION; MORPHOLOGY; GROWTH;
D O I：
10.1016/j.surfcoat.2014.11.075
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The ferroelectric behaviour of ultra-nano-crystalline diamond (UNCD) thin films with low content nitrogen (<1 at.%) is investigated by measuring the electrical, mechanical, Raman and X-ray photoemission spectroscopy. The electrical measurements I-V curve shows that the films doped with low content nitrogen possessed n-type conduction with ferro-electric behaviour at room temperature. The degree of ferroelectric behaviour changes with small change of nitrogen content incorporated in the film structure. The mechanical and microstructural properties are consistent with electrical measurements and these UNCD could be used in non-volatile memory devices. (c) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：247 / 250
页数：4
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