Semiconductor properties of anodic oxide film formed on aluminum

被引：6
|
作者：
Zhao Jing-Mao [1 ]
Gu Feng [1 ]
Zhao Xu-Hui [1 ]
Zuo Yu [1 ]
机构：
[1] Beijing Univ Chem Technol, Coll Mat Sci & Engn, Beijing 100029, Peoples R China
来源：
ACTA PHYSICO-CHIMICA SINICA | 2008年 / 24卷 / 01期
关键词：
commercial pure aluminum; anodic oxide film; semiconductor; Mott-Schottky plot;
D O I：
10.3866/PKU.WHXB20080126
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed using Mott-Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat-band potential were measured for the oxide films sealed by boiling water and K2Cr2O7, respectively. The results indicated that the anodic oxide films showed the n-type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)x10(-14) cm(-2) . s(-1). The flat-band potential of anodic oxide film declined after sealing.
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收藏
页码：147 / 151
页数：5
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