The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

被引：31

作者：

Chun, B. S. ^{[1
]}

Wu, H. C. ^{[2
]}

Abid, M. ^{[3
,4
]}

Chu, I. C. ^{[5
]}

Serrano-Guisan, S. ^{[6
]}

Shvets, I. V. ^{[2
]}

Choi, Daniel. S. ^{[1
]}

机构：

[1] Univ Idaho, Dept Chem & Mat Engn, Moscow, ID 83844 USA

[2] Univ Dublin Trinity Coll, Sch Phys, CRANN, Dublin 2, Ireland

[3] Ecole Polytech Fed Lausanne, IPMC, CH-1015 Lausanne, Switzerland

[4] King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia

[5] LG Elect, Data & Stroage R&D Lab, Seoul 137130, South Korea

[6] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

MOLECULAR-DYNAMICS; ZNO FILMS; EVAPORATION; ENERGY;

D O I：

10.1063/1.3483232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483232]

引用

页数：3

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